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| JMnic Product Specification Silicon NPN Power Transistors 2SC3063 DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For TV video output amplification PINNING PIN 1 2 3 see Fig.2(c) DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.1 0.2 1.2 150 -55~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=3m A IC=30mA ; VCE=10V IC=10|I IC=100|I IE=10|I A;IE=0 A; IB=0 A; IC=0 300 300 7 50 2.4 70 MIN 2SC3063 SYMBOL VCEsat VBE V(BR)CBO V(BR)CEO V(BR)EBO hFE COB fT TYP. MAX 1.5 1.2 UNIT V V V V V IC=5mA ; VCE=50V IE=0; VCB=30V;f=1MHz IE=-20mA ; VCB=30V 250 pF MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3063 Fig.2 outline dimensions 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3063 4 |
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